Compensation from implantation damage in InP
- 15 August 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (4) , 256-258
- https://doi.org/10.1063/1.89673
Abstract
Compensation arising from ion damage has been investigated in InP. It is found that ≳10 times the irradiation that produces resistive layers in GaAs is required to similarly compensate InP. The damage anneals in two stages indicating that two distinct defects contribute to the carrier removal process. Partial annealing at ∼400 °C rather than at 500 °C as in GaAs is suggested as a means of producing low‐absorption highly resistive layers. From compensation considerations annealing to at least 550 °C will be required for dopant implantations if effective electrical utilization is to be achieved.Keywords
This publication has 7 references indexed in Scilit:
- Compensation from implantation in GaAsApplied Physics Letters, 1973
- Optical waveguiding in proton-implanted GaAsApplied Physics Letters, 1972
- Proton-bombardment formation of stripe-geometry heterostructure lasers for 300 K CW operationProceedings of the IEEE, 1972
- NEAR BAND EDGE OPTICAL ABSORPTION PRODUCED BY ION IMPLANTATION IN GaAsApplied Physics Letters, 1971
- Electrical Studies of Low-Temperature Neutron- and Electron-Irradiated Epitaxial n-Type GaAsJournal of Applied Physics, 1969
- Isolation of junction devices in GaAs using proton bombardmentSolid-State Electronics, 1969
- Radiation Effects in GaAsJournal of Applied Physics, 1963