Gas-source molecular-beam epitaxy and optical characterisation of highly-reflective InGaAsP/InP multilayer Bragg mirrors for 1.3 µm vertical-cavity lasers
- 19 June 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (13) , 1145-1147
- https://doi.org/10.1049/el:19970762
Abstract
A highly reflective InGaAsP/InP Bragg mirror is reported for the first time at 1.3 µm. The control of both layer compositions and thicknesses over 2 in wafers in the gas-source molecular-beam epitaxy equipment has enabled the realisation of such a mirror. An absolute reflectivity of 99.6% using a VW technique was recorded on a Pt/Au metallised 40-period mirror.Keywords
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