MOVPE studies for a monolithically integrated DH laser/HBT laser driver
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 885-891
- https://doi.org/10.1016/0022-0248(88)90635-5
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Cadmium doping of InP grown by MOCVDJournal of Crystal Growth, 1987
- MOVPE growth and characteristics of Fe-doped semi-insulating InP layersElectronics Letters, 1986
- Lasers and Photodetectors in EuropeIEEE Journal on Selected Areas in Communications, 1986
- The role of impurities in III/V semiconductors grown by organometallic vapor phase epitaxyJournal of Crystal Growth, 1986
- Electrical characterization of Fe-doped semi-insulating InP grown by metalorganic chemical vapor depositionApplied Physics Letters, 1984
- Growth of Fe-doped semi-insulating InP by MOCVDJournal of Crystal Growth, 1984
- A study of p-type dopants for InP grown by adduct MOVPEJournal of Crystal Growth, 1984
- Monolithic integration of an InGaAsP/InP laser diode with heterojunction bipolar transistorsApplied Physics Letters, 1984
- Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressureJournal of Crystal Growth, 1983
- Recent developments in monolithic integration of InGaAsP/InP optoelectronic devicesIEEE Journal of Quantum Electronics, 1982