GaInAs/InP Hot Electron Transistors Grown by OMVPE
- 1 June 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (6A) , L911
- https://doi.org/10.1143/jjap.26.l911
Abstract
GaInAs/InP hot electron transistors were fabricated for the first time by using an organometallic vapor phase epitaxy (OMVPE) method. A base transport efficiency was measured as 0.52 at 77 K for the structure of a 160 nm thick Ga0.47In0.53As base and InP barrier layers. High energy peaks observed in current spectra suggested an appreciable hot electron transport. These show a promising potential of the OMVPE grown GaInAs/InP for its use in ballistic electron devices.Keywords
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