Planar and residual channeling of Si+ implants in GaAs
- 1 August 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (3) , 1015-1018
- https://doi.org/10.1063/1.337390
Abstract
The influence of planar channeling on the atomic profiles of low‐dose Si+ implants into GaAs is demonstrated as a function of wafer rotation angle, ion beam incidence angle, wafer crystallinity, and thickness of dielectric coating on the surface of the wafer during implantation. Use of a controlled wafer rotation angle or implantation through a dielectric layer results in reproducible profiles free of planar channeling effects. However, even these implants still show a significant profile ‘‘tail’’ that is absent for implants into preamorphized material, thus suggesting the existence of significant residual channeling in GaAs.This publication has 10 references indexed in Scilit:
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