Transparent conductive ZnO:Al films prepared by the planar magnetron sputtering system with obliquely facing targets
- 10 December 1993
- journal article
- Published by Elsevier in Surface and Coatings Technology
- Vol. 62 (1-3) , 683-687
- https://doi.org/10.1016/0257-8972(93)90319-j
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 13 references indexed in Scilit:
- Substrate Temperature Dependence of Transparent Conducting Al-Doped ZnO Thin Films Prepared by Magnetron SputteringJapanese Journal of Applied Physics, 1992
- Substrate temperature dependence of electrical properties of ZnO:Al epitaxial films on sapphire (12̄10)Journal of Applied Physics, 1991
- Group III Impurity Doped Zinc Oxide Thin Films Prepared by RF Magnetron SputteringJapanese Journal of Applied Physics, 1985
- Influence of Energetic Oxygen Bombardment on Conductive ZnO FilmsJapanese Journal of Applied Physics, 1985
- Stoichiometry control mechanisms for bias-sputtered zinc-oxide thin filmsCanadian Journal of Physics, 1985
- Highly Conductive and Transparent Aluminum Doped Zinc Oxide Thin Films Prepared by RF Magnetron SputteringJapanese Journal of Applied Physics, 1984
- Electrical and optical properties of zinc oxide thin films prepared by rf magnetron sputtering for transparent electrode applicationsJournal of Applied Physics, 1984
- Band-gap narrowing in heavily defect-doped ZnOPhysical Review B, 1982
- The Spatial Distribution of Deposition Rates in the DC Diode Sputtering of ZnO Thin FilmJapanese Journal of Applied Physics, 1972
- Anomalous Optical Absorption Limit in InSbPhysical Review B, 1954