Substrate Temperature Dependence of Transparent Conducting Al-Doped ZnO Thin Films Prepared by Magnetron Sputtering
- 1 March 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (3A) , L257
- https://doi.org/10.1143/jjap.31.l257
Abstract
A technique is demonstrated that improves the substrate spatial distributions of resistivity and film thickness of transparent conducting oxide thin films prepared using a conventional dc planar magnetron sputtering method. The spatial distributions of Al-doped ZnO (AZO) films are markedly improved by deposition onto substrates at temperatures above 300°C. Large-area AZO films with a resisitivity of 3-6×10-4 Ω·cm can be produced at a substrate temperature of 350°C.Keywords
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