Radiation Effect due to Energetic Oxygen Atoms on Conductive Al-Doped ZnO Films

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Abstract
Al-doped ZnO films were prepared by both RF planar magnetron and RF diode sputterings. The dependence of the ZnO film resistivity on both substrate position and Ar gas pressure was investigated. Energetic oxygen atoms (O atoms) bombarding the film were also observed by time-of-flight apparatus, and the correlation between the film resistivity and the film bombardment by the energetic O atoms was examined. The following results were obtained: When the bombardment of energetic O atoms on Al-doped ZnO films became significant at the substrate positions facing the eroded area of the target, the film resistivity increased at the same positions. Then, both the carrier concentration and Hall mobility of the Al-doped ZnO films were decreased, which was thought to be due to the film bombardment by the energetic O atoms.