A high performance low complexity SiGe HBT for BiCMOS integration

Publisher Website

27 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/bipol.1998.741887

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

A selective-epitaxial SiGe HBT with SMI electrodes featuring 9.3-ps ECL-gate delay
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
130-GHz f/sub T/ SiGe HBT technology
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002