A selective-epitaxial SiGe HBT with SMI electrodes featuring 9.3-ps ECL-gate delay
- 23 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 795-798
- https://doi.org/10.1109/iedm.1997.650501
Abstract
A selective-epitaxial SiGe base heterojunction bipolar transistor (HBT) with self-aligned stacked metal/IDP (SMI) electrodes is proposed. The SiGe-base structure, self-aligned to the 0.1-/spl mu/m-wide emitter, effectively reduces collector capacitance and SMI electrodes provide low parasitic resistances. A BPSG/SiO/sub 2/-refilled trench was introduced to reduce the substrate capacitance. A 9.3-ps delay time in a differential ECL ring oscillator was achieved.Keywords
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