Self-aligned metal/IDP Si bipolar technology with 12-ps ECL and 45-GHz dynamic frequency divider

This publication has 8 references indexed in Scilit:

• Si-analog ICs for 20 Gb/s optical receiver
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Test structure and simplified distribution model for identification of base resistance components in self-aligned polysilicon base electrode bipolar transistors
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Self-aligned metal/IDP Si bipolar technology featuring 14 ps/70 GHz
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Self-aligned metal/IDP Si bipolar technology with 12-ps ECL and 45-GHz dynamic frequency divider
  IEEE Transactions on Electron Devices, 1997
• Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/s
  IEEE Journal of Solid-State Circuits, 1996
• 46 Gb/s DEMUX, 50 Gb/s MUX, and 30 GHz static frequency divider in silicon bipolar technology
  IEEE Journal of Solid-State Circuits, 1996
• A super self-aligned selectively grown SiGe base (SSSB) bipolar transistor fabricated by cold-wall type UHV/CVD technology
  IEEE Transactions on Electron Devices, 1994
• Ultra-thin-base Si bipolar transistor using rapid vapor-phase direct doping (RVD)
  IEEE Transactions on Electron Devices, 1992