Electrical leakage at low-K polyimide/TEOS interface
- 1 June 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 19 (6) , 177-179
- https://doi.org/10.1109/55.678535
Abstract
The effect of low-K polymer passivation on electrical leakage was investigated to evaluate the reliability of polymer integration on device wafers. Polyimide passivation over Al(0.5% Cu) interconnects inlaid in TEOS increases the intralevel leakage current mainly along the polyimide/TEOS interface. Moisture absorbed in the polyimide further increases the inter facial as well as bulk leakages. These findings emphasize the importance of separating interconnects from direct contact with polyimide/TEOS interfaces to alleviate electrical isolation problems in multilevel interconnect architecture that employs low-K polymer dielectrics.Keywords
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