High-performance double-layer epitaxial-channel PMOSFET compatible with a single gate CMOSFET

23 December 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 36-37
https://doi.org/10.1109/vlsit.1996.507784

Abstract

High-performance double-layer epitaxial-channel PMOSFET compatible with a single-gate CMOSFET have been demonstrated. The thin epitaxial-Si channel is composed of a lower highly boron-doped (1.2-2.4/spl times/10/sup 18/ cm/sup -3/) layer and an upper nondoped layer, and is applicable to NMOSFET. This PMOS achieves the highest g/sub m/ with acceptable short-channel effects among PMOSs having various types of channels. The minimum gate delay of CMOS is 15.9 ps at 2.5 V for a CMOS ring oscillator with 10 /spl mu/m gate width.

Keywords

This publication has 1 reference indexed in Scilit:

Ultra-Shallow Buried-Channel P-MOSFET With Extremely High Transconductance
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1993