Electron-spin-resonance study of complex interstitial halogen-type defects in KCI doped with divalent cations
- 15 February 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 23 (4) , 1670-1684
- https://doi.org/10.1103/physrevb.23.1670
Abstract
An extensive electron-spin-resonance study has been made of trapped interstitial halogen defects in KCl doped with divalent cations (). It is shown that -irradiation-produced interstitial halogens can be trapped by monomers and dimers of , positive-ion vacancy complexes. These defects, which manifest themselves as or species, are called -type centers and altogether five different centers have been detected and studied. One is a di-interstitial halogen defect associated with an -vacancy monomer. Two other defects involve dimers of -vacancy complexes in configurations possessing inversion symmetry. The last two defects involve a associated with a monomer complex in which the is either nearest neighbor or next-nearest neighbor to the positive-ion vacancy. A careful analysis of the electron-spin-resonance spectra reveals that in both these centers the molecule performs a librational motion with respect to the symmetry plane of the defect.
Keywords
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