Optical properties at the absorption edge of
- 15 November 1977
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 16 (10) , 4666-4674
- https://doi.org/10.1103/physrevb.16.4666
Abstract
Optical properties of have been studied near the fundamental absorption edge of the semiconductor. Measurements of the index of refraction and of the absorption coefficient are reported for perpendicular and parallel to the axis, and as a function of the temperature. A qualitative band-structure model based on the ligand-field theory is presented. The first electronic transitions are found to be indirect for both polarizations and then are followed by a direct transition mainly allowed for parallel to the axis. The character of these transitions is discussed using the proposed band scheme.
Keywords
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