Electromigration effects in power MESFET rectifying and ohmic contacts

9 April 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (8) , 364-365
https://doi.org/10.1049/el:19870267

Abstract

Both gate and source/drain electromigration are significant failure mechanisms in power MESFTs. The correlation between electromigration effects due to high current density and measured electrical degradation is investigated in devices of different technologies. A safety zone of operation for ohmic contact electromigration is defined.

Keywords

FAILURE MECHANISMS
HIGH CURRENT DENSITY
LIFE TESTING
OHMIC CONTACTS
MICROWAVE DEVICES
RECTIFYING CONTACTS
ELECTRICAL DEGRADATION
ELECTROMIGRATION
POWER MESFETS
RELIABILITY
SAFETY ZONE

This publication has 1 reference indexed in Scilit:

Reliability of Aluminum-Gate Metallization in GaAs Power FETs
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1983