The Effect on Turn-On Voltage (VBE) of AlGaAs/GaAs HBT's due to the Structure of the Emitter-Base Heterojunction
- 1 August 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (8R) , 1399-1402
- https://doi.org/10.1143/jjap.29.1399
Abstract
The effects on the turn-on voltage (VBE) of collector current in AlGaAs/GaAs HBT's due to Be diffusion and discontinuity in the conduction band are investigated. It is clarified that V BE increases significantly with the decrease in saturation current due to Be diffusion into the AlGaAs emitter during MBE growth. It is also found that the V BE's of HBT's with Al compositionally abrupt and graded emitter-base junctions and homojunction GaAs bipolar transistors are the same. These results indicate that the spike-like potential barrier at the heterojunction has no influence on the electron injection from emitter to base.Keywords
This publication has 10 references indexed in Scilit:
- AlAs/GaAs tunnel emitter bipolar transistorApplied Physics Letters, 1989
- Minority-carrier lifetime in AlxGa1−xAsJournal of Vacuum Science & Technology A, 1989
- Emitter grading in AlGaAs/GaAs heterojunction bipolar transistor grown by metalorganic chemical vapor depositionApplied Physics Letters, 1986
- Generation-Recombination Current in the Emitter-Base Junction of AlGaAs/GaAs HBTsJapanese Journal of Applied Physics, 1986
- Emitter—Base bandgap grading effects on GaAlAs/GaAs heterojunction bipolar transistor characteristicsIEEE Transactions on Electron Devices, 1985
- Be redistribution during growth of GaAs and AlGaAs by molecular beam epitaxyJournal of Applied Physics, 1985
- An investigation of the effect of graded layers and tunneling on the performance of AlGaAs/GaAs heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1984
- Optimum emitter grading for heterojunction bipolar transistorsApplied Physics Letters, 1983
- Heterostructure bipolar transistors and integrated circuitsProceedings of the IEEE, 1982
- Beryllium doping and diffusion in molecular-beam epitaxy of GaAs and AlxGa1−xAsJournal of Applied Physics, 1977