Hot-carrier-induced photon emission in submicron GaAs devices
- 1 March 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (3B) , B543-B545
- https://doi.org/10.1088/0268-1242/7/3b/142
Abstract
Impact ionization phenomena accompanied by light emission in the 1.1-3.1 eV energy range take place in GaAs MESFETs and in AlGaAs/GaAs HEMTs at high drain voltages. The dominant mechanism for the emission of photons with hv>Eg is the recombination between impact ionization generated holes and channel electrons.Keywords
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