Zachaiet al. reply
- 12 November 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 65 (20) , 2611
- https://doi.org/10.1103/physrevlett.65.2611
Abstract
DOI: https://doi.org/10.1103/PhysRevLett.65.2611Keywords
This publication has 3 references indexed in Scilit:
- Direct transition energies in strained ten-monolayer Ge/Si superlatticesPhysical Review Letters, 1990
- Photoluminescence in short-period Si/Ge strained-layer superlatticesPhysical Review Letters, 1990
- Electronic properties of the (100) (Si)/(Ge) strained-layer superlatticesPhysical Review B, 1988