A SIMS analysis of deuterium diffusion in hydrogenated amorphous silicon
- 1 July 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (1) , 81-83
- https://doi.org/10.1063/1.90153
Abstract
Secondary ion mass spectroscopy (SIMS) has been used to measure the diffusion of deuterium in hydrogenated amorphous silicon. For a film deposited in a dc glow discharge in SiH4 at a substrate temperature of 315 °C, the diffusion data fits D (T) =1.17×10−2 exp(−1.53 eV/kT) cm2/s. This result implies that degradation of these films due to hydrogen out‐diffusion at 100 °C will not be significant until after more than 104 years.Keywords
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