Electronic transport in thin film electroluminescence of SrS:Ce
- 15 October 2000
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 88 (8) , 4623-4627
- https://doi.org/10.1063/1.1309124
Abstract
Thin film electroluminescent (TFEL) devices based on the scheme of were fabricated, and blue–green emission was observed in the devices. The electronic transport process is strongly affected by the mixing interaction between the conduction band of SrS and the excited state of The photoluminescent excitation and the wave forms of time-dependent electroluminescent emission show that recombinant luminescence is the main process in SrS:Ce TFEL. The experimental results reveal that the excitation mechanism is related to the sulfur vacancies.
This publication has 12 references indexed in Scilit:
- Mn pinning effect in SrS thin-film electroluminescent phosphorsApplied Physics Letters, 1999
- In situ annealing studies of molecular-beam epitaxial growth of SrS:CuApplied Physics Letters, 1999
- The mixing interaction and energy transfer between the conduction band of SrS and the levels of Ce3+Supramolecular Science, 1998
- Charge compensation study of molecular beam epitaxy grown SrS:CeApplied Physics Letters, 1997
- Blue luminescent SrGa2S4: Ce thin films grown by molecular beam epitaxyJournal of Crystal Growth, 1995
- Dynamics of Self-Trapping of Hot Excitons Strongly Coupled to PhononsJournal of the Physics Society Japan, 1990
- Efficient ZnS-like alkaline earth sulfide electroluminescenceJournal of Crystal Growth, 1990
- Ballistic transport and electroluminescence in IIB–VI and IIA–VI compoundsJournal of Crystal Growth, 1990
- Color electroluminescence in alkaline-earth sulfide thin-filmsJournal of Luminescence, 1988
- Mechanism of electroluminescence in alkaline-earth sulfidesApplied Physics Letters, 1987