Mass spectrometric study of SF6-N2 plasma during etching of silicon and tungsten
- 1 March 1990
- journal article
- Published by Springer Nature in Plasma Chemistry and Plasma Processing
- Vol. 10 (1) , 27-47
- https://doi.org/10.1007/bf01460446
Abstract
No abstract availableKeywords
This publication has 39 references indexed in Scilit:
- Rate constants for fluoride transfer from sulfur hexafluoride(1-) to fluorinated gases and sulfur dioxide: temperature dependence and implications for electrical discharges in sulfur hexafluorideThe Journal of Physical Chemistry, 1988
- A mechanistic study of SF6/O2 reactive ion etching of molybdenumJournal of Vacuum Science & Technology B, 1987
- Dry Etching of Silicon Materials in SF 6 Based Plasmas: Roles of and Gas AdditivesJournal of the Electrochemical Society, 1987
- Reactive Ion Etching in SF 6 Gas MixturesJournal of the Electrochemical Society, 1987
- Plasma diagnostics of a SF6radiofrequency discharge used for the etching of siliconJournal of Physics D: Applied Physics, 1986
- Plasma etching of refractory metals (W, Mo, Ta) and silicon in SF6 and SF6-O2. An analysis of the reaction productsPlasma Chemistry and Plasma Processing, 1985
- Reactive Ion Etching of Tungsten Films Sputter Deposited on GaAsJournal of the Electrochemical Society, 1985
- A mass spectrometric diagnostic of C2F6 and CHF 3 plasmas during etching of SiO2 and SiRevue de Physique Appliquée, 1985
- Tungsten Etching in CF 4 and SF 6 DischargesJournal of the Electrochemical Society, 1984
- Plasma etching of Si and SiO2 in SF6–O2 mixturesJournal of Applied Physics, 1981