Plasma etching of refractory metals (W, Mo, Ta) and silicon in SF6 and SF6-O2. An analysis of the reaction products
- 1 December 1985
- journal article
- Published by Springer Nature in Plasma Chemistry and Plasma Processing
- Vol. 5 (4) , 333-351
- https://doi.org/10.1007/bf00566008
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- A mass spectrometric diagnostic of C2F6 and CHF 3 plasmas during etching of SiO2 and SiRevue de Physique Appliquée, 1985
- Plasma Etching of Refractory Gates for VLSI ApplicationsJournal of the Electrochemical Society, 1984
- Tungsten Etching in CF 4 and SF 6 DischargesJournal of the Electrochemical Society, 1984
- Dry Etching of Polyimide in O 2 ‐ CF 4 and O 2 ‐ SF 6 PlasmasJournal of the Electrochemical Society, 1983
- Reactive ion etching for submicron structures of refractory metal silicides and polycidesJournal of Vacuum Science & Technology B, 1983
- Molybdenum Etching Using CCl4/O2 Mixture GasJapanese Journal of Applied Physics, 1982
- The use of ?actinometer? gases in optical diagnostics of plasma etching mixtures: SF6-O2Plasma Chemistry and Plasma Processing, 1981
- High-resolution pattern definition in tungstenApplied Physics Letters, 1981
- Plasma etching of Si and SiO2 in SF6–O2 mixturesJournal of Applied Physics, 1981
- Mass spectrometric studies at high temperatures. XXII. Stabilities of tantalum pentafluoride and tantalum oxytrifluorideThe Journal of Physical Chemistry, 1968