Molybdenum Etching Using CCl4/O2 Mixture Gas
- 1 January 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (1R)
- https://doi.org/10.1143/jjap.21.168
Abstract
Molybdenum was etched using CCl4/O2 mixture gas. Typical etch rate is about 80 nm/min, and its relative etch rate ratio to resist AZ1350J was 2: 1. Etch rates of silicon and silicon-dioxide were negligibly small, as compared to molybdenum etch rate. The dissociation process of CCl4/O2 analogous to the dissociation process in CF4/O2 mixture gas plasma was observed. Molybdenum-oxide was detected on the surface of silicon, silicon-dioxide and the resist, which were etched with molybdenum, using Auger electron spectroscopy. The deposited molybdenum-oxide increases the etch selectivity of molybdenum over underlying materials. The lateral etching rate after etching end point was about 13 nm/min, in the typical etching condition. The main reason for the pattern width narrowing in the etching was due to moderate resist slope.Keywords
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