Resonant tunneling of variously strained Si/GexSi1−x/Si heterostructures
- 31 December 1989
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 5 (2) , 201-206
- https://doi.org/10.1016/0749-6036(89)90284-x
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Resonant tunneling through a Si/GexSi1−x/Si heterostructure on a GeSi buffer layerApplied Physics Letters, 1988
- Resonant tunneling in Si/Si1−xGex double-barrier structuresApplied Physics Letters, 1988
- Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxyApplied Physics Letters, 1988
- Strained layer superlatticesSuperlattices and Microstructures, 1987
- New optical transitions in strained Si-Ge superlatticesPhysical Review B, 1987
- Resonant tunneling in magnetic field: Evidence for space-charge buildupPhysical Review B, 1987
- Structurally induced optical transitions in Ge-Si superlatticesPhysical Review Letters, 1987
- Indirect band gap and band alignment for coherently strained bulk alloys on germanium (001) substratesPhysical Review B, 1986
- GexSi1−x strained-layer superlattice waveguide photodetectors operating near 1.3 μmApplied Physics Letters, 1986
- Theoretical study of Si/Ge interfacesJournal of Vacuum Science & Technology B, 1985