The Schottky-barrier height of Au on n-Ga1−xAlxAs as a function of AlAs content
- 15 April 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (8) , 522-524
- https://doi.org/10.1063/1.90850
Abstract
The Schottky‐barrier height of Au on chemically etched n‐Ga1−xAlxAs was measured as a function of x. As x increases, the barrier height rises to a value of about 1.2 eV at x≈0.45, then decreases to about 1.0 eV as x approaches 0.83. The barrier height deviates in a linear way from the value predicted by the ’’common‐anion’’ rule as the AlAs mole fraction increases. This behavior is related to chemical reactivity of the Ga1−xAlxAs surface.Keywords
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