Characterization of the native oxide of CuInSe2 using synchrotron radiation photoemission
- 1 October 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (14) , 1428-1430
- https://doi.org/10.1063/1.104122
Abstract
Synchrotron radiation soft x‐ray photoemission spectroscopy was used to investigate the native oxide of n‐type single‐crystal CuInSe2. Photoemission measurements were acquired on the oxide surface before and after removal using sputter etching. Observed changes in the valence‐band electronic structure as well as changes in the In 4d and Se 3d core lines were correlated with the interface chemistry at the oxide/CuInSe2 interface. These results show the native oxide to be composed of an In2O3 outer layer (no SeO2) with an additional Cu2Se interface layer.Keywords
This publication has 12 references indexed in Scilit:
- Fabrication of CuInSe2 single crystals using melt-growth techniquesSolar Cells, 1986
- Surface order and stoichiometry of sputter-cleaned and annealed CuInSe2Journal of Applied Physics, 1985
- Electronic structure of the ternary chalcopyrite semiconductors CuAl, CuGa, CuIn, CuAl, CuGa, and CuInPhysical Review B, 1983
- Initial oxidation of CuInSe2Journal of Vacuum Science and Technology, 1981
- Elastic Compliance Anomalies in K2SeO4Japanese Journal of Applied Physics, 1980
- Ternary chalcopyrite compoundsProgress in Crystal Growth and Characterization, 1979
- Optical properties of the chalcopyrite semiconductors ZnGe, ZnGe, CuGa, CuAl, CuIn, and AgInPhysical Review B, 1977
- Thin-film CuInSe2/CdS heterojunction solar cellsApplied Physics Letters, 1976
- Efficient CuInSe2/CdS solar cellsApplied Physics Letters, 1975
- CuInSe2/CdS heterojunction photovoltaic detectorsApplied Physics Letters, 1974