The initial process of molecular beam epitaxial growth of Si on Si(111)7 × 7: a model for the destruction of the 7 × 7 reconstruction

This publication has 30 references indexed in Scilit:

• Structure and restructuring of the atomic steps on Si(111)7×7
  Physical Review B, 1992
• Ab initiototal-energy calculations for extremely large systems: Application to the Takayanagi reconstruction of Si(111)
  Physical Review Letters, 1992
• Activation energy for surface diffusion of Si on Si(001): A scanning-tunneling-microscopy study
  Physical Review Letters, 1991
• Observation of Initial Growth Stage of Amorphous Si Film Deposited on 7×7 Superlattice Surface of Si(111) by Low-Energy Electron Diffraction
  Japanese Journal of Applied Physics, 1990
• Epitaxial growth of silicon on Si(001) by scanning tunneling microscopy
  Journal of Vacuum Science & Technology A, 1990
• Dimer strings, anisotropic growth, and persistent layer-by-layer epitaxy
  Physical Review B, 1989
• Topography of the Si(111) surface during silicon molecular-beam epitaxy
  Physical Review Letters, 1989
• RHEED intensity rocking curves from Si(111) surface during MBE growth
  Journal of Crystal Growth, 1989
• Preservation of a 7×7 periodicity at a buried amorphous Si/Si(111) interface
  Physical Review Letters, 1986
• The growth of crystals and the equilibrium structure of their surfaces
  Philosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1951