Structure and restructuring of the atomic steps on Si(111)7×7
- 15 May 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (19) , 11332-11335
- https://doi.org/10.1103/physrevb.45.11332
Abstract
The termination of the lower terrace at the atomic steps on the Si(111)7×7 surface has been investigated with scanning tunneling microscopy (STM). It is proposed that seven positions of the steps relative to a 7×7 unit mesh of the end of the lower terrace are possible for each of two step directions, and ten of them have been observed in STM images. A rule for the termination at the steps is proposed. Structure and restructuring of the steps are described.Keywords
This publication has 9 references indexed in Scilit:
- Quantization of terrace widths on vicinal Si(111)Journal of Vacuum Science & Technology A, 1991
- Observation of surface reconstruction on silicon above 800 °C using the STMNature, 1991
- Terrace-width distributions on vicinal Si(111)Physical Review Letters, 1990
- Observation of domain boundaries on the Si (111) 7×7 surface by scanning tunneling microscopeApplied Physics Letters, 1990
- Scanning tunneling microscopy study of low-temperature epitaxial growth of silicon on Si(111)-(7×7)Journal of Vacuum Science & Technology A, 1989
- Tunneling Images of Atomic Steps on the Si(111)7×7 SurfacePhysical Review Letters, 1985
- The (7 × 7) ↔ (1 × 1) phase transition on Si(111)Surface Science, 1985
- Structural analysis of Si(111)-7×7 by UHV-transmission electron diffraction and microscopyJournal of Vacuum Science & Technology A, 1985
- Direct observation of the phase transition between the (7 × 7) and (1 × 1) structures of clean (111) silicon surfacesSurface Science, 1981