Possibilities of X-Ray Interfernce Diffractometry for the Investigation of Ion-Doped Layers
- 16 July 1990
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 120 (1) , K1-K5
- https://doi.org/10.1002/pssa.2211200127
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Interference thickness oscillations of an X-ray wave on periodically profiled siliconPhysica Status Solidi (a), 1988
- Characterization of lattice damage in ion implanted silicon by multiple crystal x-ray diffractionNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Experimental investigation of X-ray Bragg diffraction on the periodic surface relief of a perfect crystalPhysica Status Solidi (a), 1986