Temperature Dependence of Free-Exciton Luminescence from High-Quality ZnS Epitaxial Layers

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Abstract
High-quality ZnS epitaxial layers were grown by low-pressure metalorganic chemical vapor deposition using all gaseous sources. The photoluminescence spectrum of high-quality ZnS epitaxial layers at 4.2 K was dominated by the radiative recombination of free excitons. The free-exciton luminescence was observed even at room temperature (300 K). The linewidth broadening of the free-exciton luminescence with increase in temperature was analyzed in terms of exciton–LO-phonon and exciton–acoustic-phonon scattering processes.