Growth and properties of iodine-doped ZnS films grown by low-pressure MOCVD using ethyliodine as a dopant source
- 31 December 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 106 (4) , 683-689
- https://doi.org/10.1016/0022-0248(90)90043-k
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 9 references indexed in Scilit:
- Homoepitaxial growth of low-resistivity-Al-doped ZnS single crystal films by molecular beam epitaxyJournal of Crystal Growth, 1989
- Electrical and Photoluminescence Properties of Iodine-Doped ZnSe Films Grown by Low-Pressure MOVPEJapanese Journal of Applied Physics, 1988
- Excitonic and edge emissions in MOCVD-grown ZnS films and ZnSe-ZnS superlatticesJournal of Crystal Growth, 1988
- Use of Ethyliodide in Preparation of Low-Resistivity n-Type ZnSe by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1988
- Luminescence properties of ZnS/GaAs grown by gas source MBEJournal of Crystal Growth, 1988
- Electrical and optical properties of donor doped ZnS films grown by low-pressure MOCVDJournal of Crystal Growth, 1988
- Low resistivity Al-doped ZnS grown by MOVPEJournal of Crystal Growth, 1986
- Luminescence properties of iodine doped cubic ZnS crystals and the effect of ion implantation of N, P and AgJournal of Crystal Growth, 1982
- A new emission band in self-activated ZnSJournal of Luminescence, 1979