Auger recombination in intrinsic GaAs

Publisher Website
Google Scholar
Abstract
The recombination kinetics of the electron-hole plasma in strongly excited, intrinsic GaAs is investigated at room temperature by time-resolved photoluminescence using a line-shape analysis of transient spectra. Special structuring of the samples prevents stimulated emission and diffusion. Population of higher energetic subsidiary conduction-band valleys must be taken into account for densities ≳1.5×1019 cm−3. A significant influence of Auger recombination is detected for densities ≳2.5×1019 cm−3. The bimolecular recombination coefficient and an effective Auger coefficient are found to be B=(1.7±0.2)×10−10 cm3 s−1 and Ceff=(7±4)×10−30 cm6 s−1, respectively.