Influence of oxygen and deposition conditions on sputtered a-Si
- 29 February 1980
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 35-36, 303-308
- https://doi.org/10.1016/0022-3093(80)90611-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Influence of Oxygen and Deposition Conditions on RF-Sputtered Amorphous Si FilmsJapanese Journal of Applied Physics, 1979
- Influence of deposition conditions on sputter-deposited amorphous siliconJournal of Applied Physics, 1978
- Negative-States in the Gap in Hydrogenated Amorphous SiliconPhysical Review Letters, 1978
- Preparation of highly photoconductive amorphous silicon by rf sputteringSolid State Communications, 1977
- Infrared Absorption and Oxygen Content in Silicon and GermaniumPhysical Review B, 1956