Dependence of trap density in SiO2 thin films on the oxygen ion implantation dosis
- 16 December 1973
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 20 (2) , K123-K125
- https://doi.org/10.1002/pssa.2210200247
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Thermoluminescence and Color Centers in rf-Sputtered SiO2 FilmsJournal of Applied Physics, 1972
- High-Field Isothermal Currents and Thermally Stimulated Currents in Insulators Having Discrete Trapping LevelsPhysical Review B, 1972
- Electron trapping levels in silicon dioxide thermally grown on siliconJournal of Physics and Chemistry of Solids, 1972