Electron trapping levels in silicon dioxide thermally grown on silicon

This publication has 35 references indexed in Scilit:

• METAL-DEPENDENT INTERFACE STATES IN THIN MOS STRUCTURES
  Applied Physics Letters, 1971
• THIN-OXIDE MOS CAPACITANCE STUDIES OF FAST SURFACE STATES
  Applied Physics Letters, 1970
• Additional bibliography of metal—Insulator—Semiconductor studies
  IEEE Transactions on Electron Devices, 1968
• A bibliography of metal-insulator-semiconductor studies
  IEEE Transactions on Electron Devices, 1967
• The Si-SiO₂Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
  Bell System Technical Journal, 1967
• Photoemission of Electrons from Silicon and Gold into Silicon Dioxide
  Physical Review B, 1966
• Photoemission of Electrons from Silicon into Silicon Dioxide
  Physical Review B, 1965
• Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures
  Solid-State Electronics, 1965
• Field Effect‐Capacitance Analysis of Surface States on Silicon
  Physica Status Solidi (b), 1963
• An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
  Solid-State Electronics, 1962