Room Temperature Performance of (311) GaAs Quantum-Wire Structures

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Abstract
Quantum wire structures are directly formed during the growth of GaAs/AlAs multilayer structures by molecular beam epitaxy due to the natural evolution of nanometer-scale corrugations on (311)-oriented GaAs and AlAs surfaces. The pronounced optical anisotropy clearly observable at 300 K reaches a value as high as 30% for the heavy-hole exciton resonance in 43 Å GaAs quantum-wire structures. The luminescence intensity of (311) GaAs quantum-wire structures with average GaAs layer thicknesses below 66 Å is generally higher than that of conventional (100) GaAs quantum-well structures. In 56 Å GaAs quantum-wire structures no reduction of the integrated luminescence intensity is observed up to 400 K. In the regime of unsaturated optical gain, the amplified luminescence intensity of (311) GaAs quantum-wire structures exceeds that of (100) GaAs quantum-well structures by fourfold. These findings highlight the potential of these novel low-dimensional structures for advanced semiconductor device concepts.