Anisotropy of the confined hole states in a (311)AAlAs/GaAs/AlAs quantum-well system: Evidence for a camel’s-back band structure
- 15 December 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 46 (23) , 15586-15589
- https://doi.org/10.1103/physrevb.46.15586
Abstract
Magnetic fields applied parallel to the layer interfaces are used to examine the in-plane energy-band dispersion and anisotropy of the quantum-well states of a double-barrier AlAs/GaAs/AlAs resonant-tunneling diode grown on a (311)A-oriented substrate. The measurements reveal biaxial anisotropy in several of the subbands, some of which have a ‘‘camel’s-back’’-shaped structure. These features are confirmed by a six-component envelope-function calculation of the subbands of a (311) valence-band quantum well.Keywords
This publication has 23 references indexed in Scilit:
- Strong anisotropy of hole subbands in (311) GaAs-AlAs quantum wellsPhysical Review B, 1992
- High-magnetic-field studies of hole energy dispersion, cubic anisotropy and space charge build-up in the quantum well of p-type resonant tunnelling devicesSemiconductor Science and Technology, 1992
- Observation of a reentrant insulating phase near the 1/3 fractional quantum Hall liquid in a two-dimensional hole systemPhysical Review Letters, 1992
- The growth and physics of high mobility two-dimensional hole gasesJournal of Crystal Growth, 1991
- Effective-mass theory for superlattices grown on (11N)-oriented substratesPhysical Review B, 1991
- Analytic solutions of the effective-mass equation in strained Si- heterostructures applied to resonant tunnelingPhysical Review B, 1989
- Enhancement in Optical Transition in (111)-Oriented GaAs-AlGaAs Quantum Well StructuresPhysical Review Letters, 1988
- Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B SubstratesJapanese Journal of Applied Physics, 1987
- Electronic structure of [001]- and [111]-growth-axis semiconductor superlatticesPhysical Review B, 1987
- High mobility two-dimensional hole gas in an Al0.26Ga0.74As/GaAs heterojunctionJournal of Applied Physics, 1986