Characterization of buried silicon-nitride formed by nitrogen implantation
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 19-20, 279-284
- https://doi.org/10.1016/s0168-583x(87)80057-5
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- CMOS on buried nitride—A VLSI SOI technologyIEEE Transactions on Electron Devices, 1983
- Study of buried silicon nitride layers synthesized by ion implantationJournal of Applied Physics, 1980