Sr 0.8 Bi 2.5 Ta 1.2 Nb 0.9 O 9+x ferroelectric thin films prepared by two-target off-axis radio frequency magnetron sputtering
- 6 April 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (14) , 1787-1789
- https://doi.org/10.1063/1.120571
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Correlation Between Composition, Microstructure, and Ferroelectric Properties of SrBi2Ta2 O 9 Thin FilmsJournal of the Electrochemical Society, 1997
- Orientation Control of Sr0.7Bi2.3Ta2O9+α Thin Films by Chemical Liquid DepositionJapanese Journal of Applied Physics, 1997
- Oriented growth of SrBi2Ta2O9 ferroelectric thin filmsApplied Physics Letters, 1996
- Chemical Processing and Dielectric Properties of Ferroelectric SrBi2Ta2O9 Thin FilmsJapanese Journal of Applied Physics, 1996
- Formation of SrBi2Ta2O9: Part I. Synthesis and characterization of a novel “sol-gel” solution for production of ferroelectric SrBi2Ta2O9 thin filmsJournal of Materials Research, 1996
- Characteristics of spin-on ferroelectric SrBi2Ta2O9 thin film capacitors for ferroelectric random access memory applicationsJournal of Materials Research, 1996
- Preparation of Ferroelectric Thin Films of Bismuth Layer Structured CompoundsJapanese Journal of Applied Physics, 1995
- Preparation of Bi-Based Ferroelectric Thin Films by Sol-Gel MethodJapanese Journal of Applied Physics, 1995
- Pulsed laser ablation synthesis and characterization of layered Pt/SrBi2Ta2O9/Pt ferroelectric capacitors with practically no polarization fatigueApplied Physics Letters, 1995
- Preparation and ferroelectric properties of SrBi2Ta2O9 thin filmsApplied Physics Letters, 1995