Influence of Cu as an impurity in Al/Ti and Al/W thin-film reactions
- 1 December 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (11) , 1015-1017
- https://doi.org/10.1063/1.94212
Abstract
Thin-film reactions of Al/Ti and Al/W with 3 at. % Cu in Al were investigated by glancing-angle x-ray diffraction and Rutherford backscattering for vacuum annealing in the temperature range 300–500 °C. In the Al/Ti system, the intermetallic phase Al3Ti grows as (time)1/2. The presence of Cu in Al retards the growth rate by an order of magnitude at 400 °C and increases the activation energy from 1.8±0.1 to 2.4±0.1 eV. In the Al/W system, the presence of Cu retards the penetration of W into Al.Keywords
This publication has 11 references indexed in Scilit:
- Electrical Properties of Al/Ti Contact Metallurgy for VLSI ApplicationJournal of the Electrochemical Society, 1982
- Metallization for very-large-scale integrated circuitsThin Solid Films, 1982
- Oxygen impurity effects at metal/silicide interfaces: Formation of silicon oxide and suboxides in the Ni/Si systemJournal of Vacuum Science and Technology, 1981
- Diffusion barriers in layered contact structuresJournal of Vacuum Science and Technology, 1981
- Diffusion barriers in thin filmsThin Solid Films, 1978
- Anomalous growth of HfAl3 in thin filmsJournal of Vacuum Science and Technology, 1977
- An analytical study of platinum silicide formationThin Solid Films, 1976
- Characteristics of aluminum-titanium electrical contacts on siliconApplied Physics Letters, 1973
- Effect of Direct Current on Precipitation in Quenched Al + 4% Cu Thin FilmsApplied Physics Letters, 1972
- Reduction of Electromigration in Aluminum Films by Copper DopingIBM Journal of Research and Development, 1970