Self-consistent calculations on GaAs-AlxGa1-xAs heterojunctions
- 20 October 1985
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 18 (29) , 5617-5627
- https://doi.org/10.1088/0022-3719/18/29/012
Abstract
The sub-band structure at zero temperature of a two-dimensional electron gas at an AlxGa1-xAs-GaAs heterojunction interface is calculated in the envelope function approach. A model is developed in which the potential energy, the sub-band structure, the areal density of the electron gas as well as depletion lengths can be calculated as a function of material properties and growth parameters only. The authors have also calculated analytically the minimum value of the donor concentration in the AlxGa1-xAs layer for obtaining an electron gas at zero temperature.Keywords
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