E'1 centres in buried oxide layers formed by oxygen ion implantation into silicon
- 1 March 1992
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 65 (1-4) , 93-96
- https://doi.org/10.1016/0168-583x(92)95019-n
Abstract
No abstract availableKeywords
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