Strong Electric Field Heating of Conduction-Band Electrons in Si
- 16 April 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 52 (16) , 1445-1448
- https://doi.org/10.1103/physrevlett.52.1445
Abstract
We demonstrate that average conduction-band electrons in a wide-band-gap insulator, Si, are heated several electronvolts above the conduction-band edge at fields of 5 to 12 MV/cm. The electronic energy distribution appears to be stabilized at these high fields by energy-loss mechanisms other than LO-phonon scattering.
Keywords
This publication has 19 references indexed in Scilit:
- Light Emission from Electron-Injector StructuresPhysical Review Letters, 1983
- Monte-Carlo Studies of the Electron Mobility in SiO2Physica Status Solidi (a), 1982
- Theory of electron-avalanche breakdown in solidsPhysical Review B, 1981
- Electron transport and breakdown in SiO2Journal of Applied Physics, 1979
- Electron transport at high fields in a-SiO2Applied Physics Letters, 1975
- Hot Electrons in SiPhysical Review Letters, 1975
- Mechanism of electrical breakdown in SiO2 filmsJournal of Applied Physics, 1975
- Two-band conduction of amorphous silicon nitridePhysica Status Solidi (a), 1974
- Calculation of electric field breakdown in quartz as determined by dielectric dispersion analysisJournal of Applied Physics, 1972
- Velocity Acquired by an Electron in a Finite Electric Field in a Polar CrystalPhysical Review B, 1970