Lasing characteristics of high-performance narrow-stripe InGaAs-GaAs quantum-well lasers confined by AlAs native oxide
- 1 February 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 8 (2) , 176-178
- https://doi.org/10.1109/68.484232
Abstract
High-performance narrow-stripe InGaAs-GaAs quantum-well lasers with integral buried AlAs native-oxide layers have been fabricated. AlAs native-oxide layers above and below waveguide region were employed for current and optical confinement to form narrow-stripe lasers. A low temperature (400/spl deg/C) anisotropic wet oxidation technique was used to selectively oxidize AlAs layers in the epitaxial structure. The devices demonstrated continuous wave threshold currents of 3.5 mA, external quantum efficiencies of 82%, and a characteristic temperature of 133 K for 1.8 /spl mu/m-wide aperture, 400 /spl mu/m-long devices. Threshold currents of 1.7 mA were obtained by applying HR/HR coatings.Keywords
This publication has 10 references indexed in Scilit:
- Submilliampere threshold current InGaAs-GaAs-AlGaAs lasers and laser arrays grown on nonplanar substratesIEEE Journal of Selected Topics in Quantum Electronics, 1995
- Ultralow threshold current vertical-cavity surface-emittinglasersobtained with selective oxidationElectronics Letters, 1995
- Ultralow threshold current vertical-cavity surface-emitting lasers with AlAs oxide-GaAs distributed Bragg reflectorsIEEE Photonics Technology Letters, 1995
- Robust and Wavelength Insensitive Performance of Selectively Oxidized Vertical-Cavity LasersPublished by Optica Publishing Group ,1995
- Low threshold voltage vertical-cavity lasersfabricated by selective oxidationElectronics Letters, 1994
- Native-oxide defined ring contact for low threshold vertical-cavity lasersApplied Physics Letters, 1994
- Native oxide top- and bottom-confined narrow stripe p-n AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure laserApplied Physics Letters, 1993
- Ultralow laser threshold and high speed InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers for optical interconnectsElectronics Letters, 1993
- High-performance planar native-oxide buried-mesa index-guided AlGaAs-GaAs quantum well heterostructure lasersApplied Physics Letters, 1992
- Dependence on doping type (p/n) of the water vapor oxidation of high-gap AlxGa1−xAsApplied Physics Letters, 1992