Survey of the Thermodynamics and Kinetics of Crystallization of Si and Ge
- 1 January 1982
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Transitions to Defective Crystal and the Amorphous State Induced in Elemental Si by Laser QuenchingPhysical Review Letters, 1982
- Ultrarapid crystal growth and impurity segregation in amorphous silicon annealed with short Q-switched laser pulsesApplied Physics Letters, 1982
- Kinetics of laser-induced solid phase epitaxy in amorphous silicon filmsJournal of Applied Physics, 1982
- Crystallization ProcessesPublished by Elsevier ,1982
- Lack of importance of ambient gases on picosecond laser-induced phase transitions of siliconApplied Physics Letters, 1981
- Phase Transitions in Amorphous Si Produced by Rapid HeatingPhysical Review Letters, 1980
- Picosecond laser-induced melting and resolidification morphology on SiApplied Physics Letters, 1979
- Order-Disorder Transition in Single-Crystal Silicon Induced by Pulsed uv Laser IrradiationPhysical Review Letters, 1979
- Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous SiJournal of Applied Physics, 1978