Etch behaviour and lateral etch rates of trilevel resist systems in an rie-system using SOG and Ti intermediate layers
- 1 December 1985
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 3 (1) , 483-489
- https://doi.org/10.1016/0167-9317(85)90060-7
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- An improved trilevel resist system for submicron optical lithographyJournal of Vacuum Science & Technology B, 1985
- Spin‐On Glass as an Intermediate Layer in a Tri‐Layer Resist ProcessJournal of the Electrochemical Society, 1982
- High resolution trilevel resistJournal of Vacuum Science and Technology, 1982