Selection of surface ohmic metal for fabricating0.1 µm InAlAs/InGaAs heterojunction FETswith wet-chemically-recessed gates
- 4 December 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (25) , 2160-2161
- https://doi.org/10.1049/el:19971425
Abstract
The authors show that the profiles of gate grooves can be effectively manoeuvred by the selection of surface metals of ohmic electrodes. The Ni surface metal is advantageous over Pt, since the recess etching is independent of materials and is more spatially homogenous. These different etching behaviours and resulting gate-groove profiles are attributed to the existence of electrochemical effects during recess etching.Keywords
This publication has 2 references indexed in Scilit:
- Gate-recess and device geometry impact on the microwave performance and noise properties of 0.1 mu m InAlAs/InGaAs HEMT'sPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- The effects of electrochemically-induced etching non-uniformities on microwave field effect transistorsIEEE Electron Device Letters, 1995