Gate-recess and device geometry impact on the microwave performance and noise properties of 0.1 mu m InAlAs/InGaAs HEMT's
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A study in which the deep recess was found to be essential in order to maintain a high gate aspect ratio and thus larger G/sub m/G/sub ds/ and C/sub gs//C/sub gd/ ratios is described. This ensures a high power gain and high f/sub max/ which is a figure of merit in microwave circuit operation. Also, proper recessed devices show less microwave noise and broader noise minima. The optimum recess for both microwave and noise performance was found to be around I/sub dss/ of 500 mA/mm for the HEMT and showed f/sub max/ of 217 GHz, f/sub T/ of 173 GHz, and a minimum noise figure of 0.6 dB. The device geometry effect was investigated, and the degradation of the device performance due to the parasitics was found for small gate width devices. Large gate width devices were limited in high frequency performance due to the high gate metal resistance. Overall, an appropriate recess, aspect ratio, and device periphery must be selected for optimum microwave performance.<>Keywords
This publication has 10 references indexed in Scilit:
- Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTsElectronics Letters, 1991
- High-frequency equivalent circuit of GaAs FETs for large-signal applicationsIEEE Transactions on Microwave Theory and Techniques, 1991
- Characterization of surface-undoped In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP high electron mobility transistorsIEEE Transactions on Electron Devices, 1990
- Importance of source and drain resistance to the maximum f/sub T/ of millimeter-wave MODFETsIEEE Electron Device Letters, 1989
- Bias dependence of the MODFET intrinsic model elements values at microwave frequenciesIEEE Transactions on Electron Devices, 1989
- Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate lengthIEEE Electron Device Letters, 1988
- The role of inefficient charge modulations in limiting the current-gain cutoff frequency of the MODFETIEEE Transactions on Electron Devices, 1988
- Noise modeling and measurement techniques (HEMTs)IEEE Transactions on Microwave Theory and Techniques, 1988
- A high aspect ratio design approach to millimeter-wave HEMT structuresIEEE Transactions on Electron Devices, 1985
- Optimal noise figure of microwave GaAs MESFET'sIEEE Transactions on Electron Devices, 1979