Anomalous temperature dependence of growth rate of GaAs grown by trimethylgallium and arsine molecular beams and two competing growth mechanisms
- 1 October 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 105 (1-4) , 209-212
- https://doi.org/10.1016/0022-0248(90)90363-p
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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